III-nitride blue and ultraviolet photonic crystal light emitting diodes
نویسندگان
چکیده
We present results on enhancement of 460 nm blue and 340 nm UV optical power output in III-nitride light emitting diodes ~LEDs! using photonic crystals ~PCs! under current injection. Triangular arrays of the PCs with diameter/periodicity of 300/700 nm were patterned using electron-beam lithography and inductively coupled plasma dry etching. The total power at 20 mA of 3003300 mm unpackaged LED chips revealed an increase by 63% and 95% for the blue and UV LEDs, respectively, as a result of the PC formation. Possible ways for further improving enhancement of light extraction using PCs are discussed. © 2004 American Institute of Physics. @DOI: 10.1063/1.1644050#
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Recognized as technologically important materials for optoelectronics, III-nitride wide-bandgap semiconductors are used in light-emitting diodes (LEDs) with emission wavelengths from the ultraviolet to amber, and blue/UV-emitting laser diodes.1 These materials are excellent for photonic devices because of their large energy bandgaps, their highly efficient light emission, and their ability to b...
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